Rely on a fully vertically integrated diode laser bar and chip supplier who offers high volume production capacity over a wide range of powers and wavelengths. Material Choices – Based on GaAs, InP, and GaSb semiconductor structures, we offer 750 nm to 2200 nm.
Resources:
Features & Benefits:
Unique AAA epitaxial technology for highest reliability and lifetime.
7W from a 200 µm wide emitter.
5W from a 150 µm wide emitter.
3.2W from a 90 µm wide emitter.
Lifetime >20,000 hours.
ROHS compliant.
Technical Specifications:
Wavelength ( nm): 808 – 2240 .
Power (W) : 0,5 -7.
Operation Mode: CW.
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